مرکز منطقه ای اطلاع رساني علوم و فناوري - Measurement of low resistive ohmic contacts on semiconductors

DocumentCode :

1106858

Title :

Measurement of low resistive ohmic contacts on semiconductors

Author :

Woelk, Egbert G. ; Krautle, Herbert ; Beneking, Heinz

Author_Institution :

Technical University Aachen, Aachen, Germany

Volume :

Issue :

fYear :

1986

fDate :

1/1/1986 12:00:00 AM

Firstpage :

Lastpage :

Abstract :

Macroscopic analog models of planar contacts to semiconductor layers were made and equipotential lines underneath the contact were traced. Voltage drop and current density across the interfacial layer of such contacts were determined and compared to theoretically calculated values. The extended transmission line model (TLM) is used to describe the measurements and a reasonable limit for its application to the measurement of ρcis $\\rho_{c}/(\\rho_{s} . h) > 0.2$ ; for $\\rho_{c}/(\\rho_{s} . h) \\le 0.2$ the model of Overmeyer appears to be applicable.

Keywords :

Conductivity; Contact resistance; Current density; Electrical resistance measurement; Ohmic contacts; Planar transmission lines; Semiconductor materials; Transmission line measurements; Transmission line theory; Voltage;

fLanguage :

English

Journal_Title :

Electron Devices, IEEE Transactions on

Publisher :

ieee

ISSN :

0018-9383

Type :

jour

DOI :

10.1109/T-ED.1986.22430

Filename :

1485647

Link To Document :

https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1106858