Title :
Design and fabrication of a 1 Gb/s OEIC receiver for fiber-optic data link applications
Author :
Shih, Chian-Gauh ; Chang, Wei-Heng ; Wang, Jianshi ; Barlage, Douglas W. ; Teng, Chih-Chong ; Feng, Milton
Author_Institution :
Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA
fDate :
6/1/1996 12:00:00 AM
Abstract :
This paper describes a 1 Gb/s fully monolithic integrated GaAs OEIC receiver based on 0.6 μm gate length D-mode MESFET technology. The adoption of 0.85 μm short wavelength standard permits the integration of low capacitance MSM photodetectors and conventional electronic circuitry onto a single chip. Hence, the viability of low-cost manufacturing of high-speed optoelectronic devices will be improved. The design, fabrication, and testing of the receiver chip is discussed in detail. A BER of less than 10-9 at 1 Gb/s has been achieved for optical power of -20.5 dBm with a dynamic range of greater than 32 dB. This performance is sufficient for practical use in optical data link systems operating at gigabit/s data rates
Keywords :
MESFET integrated circuits; capacitance; integrated circuit design; integrated circuit technology; integrated circuit testing; integrated optoelectronics; metal-semiconductor-metal structures; optical receivers; photodetectors; μm gate length D-mode MESFET technology; μm short wavelength standard; 0.6 mum; 0.85 mum; 1 Gbit/s; GaAs; Gb/s OEIC receiver; dynamic range; electronic circuitry; fiber-optic data link; fully monolithic integrated GaAs OEIC receiver; gigabit/s data rates; high-speed optoelectronic devices; integrated optoelectronics; low capacitance MSM photodetectors; low-cost manufacturing; optical data link systems; optical power; receiver chip; Capacitance; Circuit testing; Gallium arsenide; High speed optical techniques; Integrated circuit technology; Manufacturing; Optical device fabrication; Optical receivers; Optoelectronic devices; Photodetectors;
Journal_Title :
Lightwave Technology, Journal of
