DocumentCode :
1106921
Title :
A comparison of active and passive optical bistability in semiconductors
Author :
Adams, M.J. ; Westlake, H.J. ; O´Mahony, M.J. ; Henning, I.D.
Author_Institution :
British Telecom Research Laboratories, Martlesham Heath, Ipswich, England
Volume :
21
Issue :
9
fYear :
1985
fDate :
9/1/1985 12:00:00 AM
Firstpage :
1498
Lastpage :
1504
Abstract :
A comparison is presented between optical bistability in laser amplifiers and in passive Fabry-Perot cavities. The basis for comparison is afforded by a new analysis of optical amplifiers which encompasses the cases of passive refractive and absorptive bistability as special limiting cases. The results indicate that amplifiers have advantages of lower input intensity requirements (by a factor of 103) and reduced sensitivity to wavelength by comparison with passive cavities; experimental results indicate an input power of -30 dBm is required for active bistability. Facet coating requirements for active and passive optimum configurations are also discussed.
Keywords :
Bistability, optical; Fabry - Perot resonators; Laser amplifiers; Optical bistability; Gallium arsenide; Nonlinear optics; Optical amplifiers; Optical bistability; Optical refraction; Optical sensors; Optical superlattices; Power amplifiers; Semiconductor optical amplifiers; Stimulated emission;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.1985.1072818
Filename :
1072818
Link To Document :
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