DocumentCode :
1107043
Title :
Small-Signal Analysis of Decananometer Bulk and SOI MOSFETs for Analog/Mixed-Signal and RF Applications Using the Time-Dependent Monte Carlo Approach
Author :
Eminente, Simone ; Barin, Nicola ; Palestri, Pierpaolo ; Fiegna, Claudio ; Sangiorgi, Enrico
Author_Institution :
Bologna Univ., Cesena
Volume :
54
Issue :
9
fYear :
2007
Firstpage :
2283
Lastpage :
2292
Abstract :
A state-of-the-art Monte Carlo simulator is applied to the investigation of the radio-frequency performance of bulk and ultrathin-body single-gate SOI MOSFETs that are designed according to the prescriptions of the 2005 ITRS for analog and mixed-signal applications. We provide an analysis of the signal-delay buildup along the channel and an investigation of the scaling properties of the parameters of the ac equivalent circuit, the transition frequency, and the 3-dB bandwidth of the voltage gain in common-source configuration. A comparison with a standard drift-diffusion approach is presented in order to discuss the main differences between the two transport models in terms of high-frequency ac analysis.
Keywords :
MOSFET; Monte Carlo methods; equivalent circuits; microwave devices; semiconductor device models; CMOS scaling; Monte Carlo simulator; SOI MOSFET; ac analysis; ac equivalent circuit; analog signal application; decananometer bulk MOSFET; device simulation; mixed-signal application; radio frequency application; radio-frequency performance; signal-delay buildup; small-signal analysis; Analytical models; CMOS technology; Circuits; MOSFETs; Monte Carlo methods; Particle scattering; Performance analysis; Radio frequency; Signal analysis; Transient analysis; CMOS scaling; MOSFET; Monte Carlo (MC); device simulation; radio frequency (RF);
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2007.902860
Filename :
4294200
Link To Document :
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