Planar Wrap-Around Gated AlGaN/GaN MIS-HEMTs

This letter reports the proposition and fabrication of depletion-mode (D-mode) GaN metal-insulator-semiconductor high electron mobility transistors with a planar wrap-around gate structure. By employing this scheme, the photo-masks for defining the planar isolations and the gate insulators are not needed, reducing the manufacturing cost. Measurements of the device characteristics indicate that the proposed scheme yields high performance GaN devices. This work will stimulate GaN power device research and development activities and volume production efforts in Si foundries worldwide.