An Analytical Model for the Threshold Voltage Shift Caused by Two-Dimensional Quantum Confinement in Undoped Multiple-Gate MOSFETs

Author

Granzner, Ralf ; Schwierz, Frank ; Polyakov, Vladimir M.

Author_Institution

Technische Univ. Ilmenau, Ilmenau

Volume

54

Issue

9

fYear

2007

Firstpage

2562

Lastpage

2565

Abstract

An analytical model describing the effects of 2-D quantum-mechanical carrier confinement on the threshold voltage V_th of multiple-gate MOSFETs with rectangular cross section is developed. The model is verified by a comparison with self-consistent solutions of 1-D and 2-D Schroumldinger and Poisson equations. It is shown that: 1) the model results asymptotically approach the case of 1-D confinement in single-gate silicon-on-insulator or double-gate MOSFETs if one body dimension becomes larger than 20 nm and 2) the effect of 2-D confinement is remarkably stronger than a simple combination of two 1-D quantization effects.

Keywords

MOSFET; semiconductor device models; silicon-on-insulator; 2-D quantum-mechanical carrier confinement; Poisson equation; Schrodinger equation; analytical model; compact modeling; single-gate silicon-on-insulator MOSFET; threshold voltage shift; undoped multiple-gate MOSFET; Analytical models; Carrier confinement; Effective mass; Electrons; MOSFETs; Poisson equations; Potential well; Silicon; Threshold voltage; Two dimensional displays; 2-D quantum confinement; Compact modeling; fin-type field-effect transistor (FinFET); multiple-gate (MG) MOSFETs; threshold voltage; trigate MOSFET;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2007.902167

Filename

4294205