DocumentCode
1107098
Title
Elementary ambipolar field-effect transistor model
Author
Pfleiderer, Hans
Author_Institution
Siemens Research Laboratories, Munich, Federal Republic of Germany
Volume
33
Issue
1
fYear
1986
fDate
1/1/1986 12:00:00 AM
Firstpage
145
Lastpage
147
Abstract
An ambipolar FET can be operated alternatively in n-channel and p-channel modes. A simple conceptual model is proposed. It considers ohmic source and drain contacts, a gradual channel, and the depletion approximation.
Keywords
Amorphous silicon; Crystallization; FETs; Helium; Insulation; Ohmic contacts; Semiconductor films; Space charge; Thin film transistors; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1986.22451
Filename
1485668
Link To Document