Title :
Impact ionization coefficients of electrons and holes in
Author :
Osaka, Fukunobu ; Mikawa, Takashi ; Kaneda, Takao ; Osaka, F. ; Mikawa, T. ; Kaneda, Tadahiro
Author_Institution :
Fujitsu Labs. Ltd., Atsugi, Japan
fDate :
9/1/1985 12:00:00 AM
Abstract :
The arsenic composition dependences of electron and hole ionization coefficients, α and β, in
Keywords :
Ionization; Charge carrier processes; Crystals; Diodes; Impact ionization; Indium phosphide; Light scattering; Optical fiber communication; Optical scattering; Photodetectors; Silicon compounds;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.1985.1072835
