Classical versus quantum mechanical calculation of the electron distribution at the n-AlGaAs/GaAs heterointerface

Four kinds of numerical models have been developed to investigate the quantum mechanical effect on charge control in HEMT´s at room temperature. In spite of the two-dimensional nature of the channel electrons, a classical approach using Fermi statistics is shown to be able to predict the device performance with good accuracy, while the triangular-well approximation sometimes introduces serious errors.