• DocumentCode
    1107140
  • Title

    Voltage-controlling mechanisms in low-resistivity silicon solar cells—A unified approach

  • Author

    Weizer, V.G. ; Swartz, C.K. ; Hart, R.E. ; Godlewski, M.P.

  • Author_Institution
    NASA Lewis Research Center, Cleveland, OH
  • Volume
    33
  • Issue
    1
  • fYear
    1986
  • fDate
    1/1/1986 12:00:00 AM
  • Firstpage
    156
  • Lastpage
    158
  • Abstract
    An experimental technique is used to determine the relative values of the base and emitter components of the dark saturation current of six types of high-voltage low-resistivity silicon solar cells. One of the suprising findings is the suggestion that the magnitude of the minority-carrier mobility may be process-dependent.
  • Keywords
    Electron mobility; Error analysis; Gallium arsenide; Numerical models; Photovoltaic cells; Quantum mechanics; Silicon; Statistics; Temperature; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1986.22454
  • Filename
    1485671
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1107140