DocumentCode :
1107150
Title :
Resistive Memory Switching of 
Films for a Nonvolatile Memory Application
Author :
Lv, H.B. ; Yin, M. ; Fu, X.F. ; Song, Y.L. ; Tang, L. ; Zhou, P. ; Zhao, C.H. ; Tang, T.A. ; Chen, B.A. ; Lin, Y.Y.
Author_Institution :
Fudan Univ., Shanghai
Volume :
29
Issue :
4
fYear :
2008
fDate :
4/1/2008 12:00:00 AM
Firstpage :
309
Lastpage :
311
Abstract :
Poly crystalline CuxO films produced by plasma oxidation are investigated for nonvolatile memory applications. Reversible bistable resistive switching from a high-resistance state to a low-resistance state, and vice versa, is observed in an integrated Al/CuxO/Cu structure under voltage sweeping. More than 3000 repetitive cycles are observed in 180-mum memory devices with an on/off ratio of ten times. Data testing shows that the devices meet the ten-year retention requirement for the storage of programmed logic signals.
Keywords :
films; storage management chips; switching circuits; nonvolatile memory application; plasma oxidation; poly crystalline films; programmed logic signal; resistive memory switching; reversible bistable resistive switching; voltage sweeping; Electrodes; Logic testing; Nonvolatile memory; Optical films; Oxidation; Plasma applications; Plasma devices; Scanning electron microscopy; Substrates; X-ray scattering; $hbox{Cu}_{x}hbox{O}$
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2008.917109
Filename :
4475273
Link To Document :
