DocumentCode :
1107185
Title :
Hot-Carrier Reliability and Analog Performance Investigation of DMG-ISEGaS MOSFET
Author :
Kaur, Ravneet ; Chaujar, Rishu ; Saxena, Manoj ; Gupta, R.S.
Author_Institution :
Delhi Univ., New Delhi
Volume :
54
Issue :
9
fYear :
2007
Firstpage :
2556
Lastpage :
2561
Abstract :
Dual-material-gate (DMG) insulated shallow extension gate-stack MOSFET involving dielectric pocket (DP) and DMG assimilation onto the conventional MOSFET has been studied. Simulations reveal a reduction in substrate leakage current, linearity improvement, enhancement in - gm/IDS, early voltage (VEA), and gm/gd, down to 50-nm gate length as an outcome of this DP and DMG integration.
Keywords :
MOSFET; hot carriers; leakage currents; semiconductor device reliability; dielectric pocket; dual-material-gate; hot-carrier reliability; insulated shallow extension gate-stack MOSFET; substrate leakage current; Dielectric substrates; Dielectrics and electrical insulation; Electrodes; High K dielectric materials; Hot carriers; Information technology; Leakage current; Linearity; MOSFET circuits; Voltage; ATLAS-2D; dual-material gate (DMG); gate stack; insulated shallow extension (ISE); linearity;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2007.902855
Filename :
4294214
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1107185
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