DocumentCode
1107243
Title
Bistable output characteristics in semiconductor laser injection locking
Author
Kawaguchi, Hitoshi ; Inoue, Kyo ; Matsuoka, Takashi ; Otsuka, Kenju
Author_Institution
NTT Public Corporation, Musashino-shi, Tokyo, Japan
Volume
21
Issue
9
fYear
1985
fDate
9/1/1985 12:00:00 AM
Firstpage
1314
Lastpage
1317
Abstract
Experimental observations of bistability in semiconductor lsaer injection locking are demonstrated for the first time in the output versus frequency detuning curve. This is accomplished using DFB lasers for both injecting and injected lasers in order to maintain a single longitudinal mode operation, even at a near laser threshold. The essential mechanism giving rise to the bistability is the carrier density dependence of the refractive index in the active region. Bistability in injected laser output is also observed when the injecting laser drive current changes.
Keywords
Bistability, optical; Distributed feedback (DFB) lasers; Injection-locked oscillators; Optical bistability; Semiconductor lasers; Equations; Injection-locked oscillators; Laboratories; Laser mode locking; Laser theory; Laser transitions; Refractive index; Semiconductor lasers; Telegraphy; Telephony;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/JQE.1985.1072847
Filename
1072847
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