• DocumentCode
    1107251
  • Title

    Auto-calibrated potential map drawing equipment and its application to characterization of plasma-coupled devices

  • Author

    Tamama, Teruo ; Kuji, Norio

  • Author_Institution
    NTT Atsugi Electrical Communication Laboratories, Kanagawa, Japan
  • Volume
    33
  • Issue
    2
  • fYear
    1986
  • fDate
    2/1/1986 12:00:00 AM
  • Firstpage
    192
  • Lastpage
    197
  • Abstract
    By utilizing the voltage contrast mode observed in a scanning electron microscope, the authors have fabricated equipment which they call auto-calibrated potential map drawing equipment (AP-MADE). This equipment can be used to observe the two-dimensional potential distribution on a semiconductor device surface and to draw its equipotential curves. Therefore, it can be used as a semiconductor device analyzer. Utilizing the APMADE, the transfer characteristics of plasma-coupled devices are analyzed in detail and its best asymmetric structure is pointed out quantitatively.
  • Keywords
    Computational modeling; Plasma applications; Plasma devices; Plasma measurements; Plasma properties; Sampling methods; Scanning electron microscopy; Semiconductor devices; System testing; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1986.22464
  • Filename
    1485681