DocumentCode
1107251
Title
Auto-calibrated potential map drawing equipment and its application to characterization of plasma-coupled devices
Author
Tamama, Teruo ; Kuji, Norio
Author_Institution
NTT Atsugi Electrical Communication Laboratories, Kanagawa, Japan
Volume
33
Issue
2
fYear
1986
fDate
2/1/1986 12:00:00 AM
Firstpage
192
Lastpage
197
Abstract
By utilizing the voltage contrast mode observed in a scanning electron microscope, the authors have fabricated equipment which they call auto-calibrated potential map drawing equipment (AP-MADE). This equipment can be used to observe the two-dimensional potential distribution on a semiconductor device surface and to draw its equipotential curves. Therefore, it can be used as a semiconductor device analyzer. Utilizing the APMADE, the transfer characteristics of plasma-coupled devices are analyzed in detail and its best asymmetric structure is pointed out quantitatively.
Keywords
Computational modeling; Plasma applications; Plasma devices; Plasma measurements; Plasma properties; Sampling methods; Scanning electron microscopy; Semiconductor devices; System testing; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1986.22464
Filename
1485681
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