p-i-n photodiodes made in laser-recrystallized silicon-on-insulator

Lateral p-i-n photodiodes made in laser-recrystallized silicon-on-insulator are investigated. Dark reverse currents of 0.1 pA/µm are obtained (5-V reverse voltage), as well as an efficiency of more than 5 percent in the green part of the visible spectrum. The influence of a back gate (the mechanical substrate) on the intrinsic zone of the diode is discussed. The carrier lifetime is found to be approximately 8 µs in the intrinsic zone, and the photogenerated current is proportional to incident light power over more than 5 decades.