DocumentCode
1107373
Title
Subtractive effect of charge integration on dual-gate CID readout with correlated double sampling
Author
Wang, Samuel C H
Author_Institution
General Electric Company, Syracuse, NY
Volume
33
Issue
2
fYear
1986
fDate
2/1/1986 12:00:00 AM
Firstpage
254
Lastpage
259
Abstract
In this paper we describe the physical mechanisms of the "subtractive effect" on the dual-gate charge-injection device (CID) readout due to on-going charge integration during the time the video waveform is processed with correlated double sampling. Performance degradation of the CID area array caused by the subtractive effect and two correction schemes for eliminating the problems under different irradiation conditions are discussed.
Keywords
Charge coupled devices; Charge transfer; Degradation; Interface states; Potential well; Sampling methods; Semiconductor device noise; Sensor arrays; Signal design; Solid state circuits;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1986.22475
Filename
1485692
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