مرکز منطقه ای اطلاع رساني علوم و فناوري - Structural and Electrical Characteristics of <formula formulatype="inline"> <img src="/images/tex/20099.gif" alt="\\hbox {Yb}_{2}\\hbox {O}_{3}"> </formula> and <formula formulatype="inline"> <img src="/images/tex/25069.gif" alt="\\hbox {YbTi}

Title :

Structural and Electrical Characteristics of $\\hbox {Yb}_{2}\\hbox {O}_{3}$ and $\\hbox {YbTi}_{\\rm x}\\h</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Author : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>Tung-Ming Pan ; Ching-Hung Chen ; Fa-Hsyang Chen ; Yu-Shu Huang ; Jim-Long Her</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Author_Institution : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>Dept. of Electron. Eng., Chang Gung Univ., Taoyuan, Taiwan</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Volume : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>11</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Issue : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>3</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>fYear : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>2015</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>fDate : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>Mar-15</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Firstpage : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>248</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Lastpage : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>254</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Abstract : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>In this paper, we developed high-κ Yb<sub>2</sub>O<sub>3</sub> and YbTi<sub>x</sub>O<sub>y</sub> gate dielectrics for an amorphous indium-gallium-zinc oxide (α-IGZO) thin-film transistor (TFT) applications. Compared with the Yb<sub>2</sub>O<sub>3</sub> dielectric, the α-IGZO TFT using the high-κ YbTi<sub>x</sub>O<sub>y</sub> gate dielectric exhibited better electrical characteristics, such as a high Ion/Ioff ratio of 4.5×10<sup>7</sup>, a high field-effect mobility of 26.1 cm<sup>2</sup>/V-s, a low threshold voltage of 0.53 V, and a low subthreshold swing of 210 mV/decade. These results are probably due to the incorporation of Ti into the Yb<sub>2</sub>O<sub>3</sub> film, resulting in the formation of smooth surface and low density of interface states at the oxide/channel interface. Furthermore, the stability of high-κ Yb<sub>2</sub>O<sub>3</sub> and YbTi<sub>x</sub>O<sub>y</sub> a-IGZO TFTs was investigated under both positive bias stress and negative bias stress conditions.</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Keywords : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>amorphous semiconductors; electron mobility; gallium compounds; high-k dielectric thin films; indium compounds; interface states; semiconductor device reliability; thin film transistors; ytterbium compounds; zinc compounds; InGaZnO-Yb<sub>2</sub>O<sub>3</sub>; InGaZnO-YbTi<sub>x</sub>O<sub>y</sub>; amorphous indium-gallium-zinc oxide thin-film transistor; amorphous-IGZO TFT; field-effect mobility; high-κ gate dielectrics; interface state density; negative bias stress conditions; oxide-channel interface; positive bias stress conditions; Dielectrics; Films; Logic gates; NIST; Rough surfaces; Surface roughness; Thin film transistors; <formula formulatype=$ $hbox{YbTi}_{rm x}hbox{O}_{rm y}$; $hbox{Yb}_{2}hbox{O}_{3}$ ; Amorphous indium-gallium-zinc oxide ($alpha$ -IGZO); gate dielectric; negative bias stress (NBS); positive bias stress (PBS); thin-film transistor (TFT);