Low-Field Electron Mobility Model for Ultrathin-Body SOI and Double-Gate MOSFETs With Extremely Small Silicon Thicknesses

Author

Reggiani, Susanna ; Gnani, Elena ; Gnudi, Antonio ; Rudan, Massimo ; Baccarani, Giorgio

Author_Institution

Univ. of Bologna, Bologna

Volume

54

Issue

9

fYear

2007

Firstpage

2204

Lastpage

2212

Abstract

A number of experiments have recently appeared in the literature that extensively investigate the silicon-thickness dependence of the low-field carrier mobility in ultrathin-body silicon-on-insulator (SOI) MOSFETs. The aim of this paper is to develop a compact model, suited for implementation in device- simulation tools, which accurately predicts the low-field mobility in SOI single- and double-gate MOSFETs with Si thicknesses down to 2.48 nm. Such a model is still missing in the literature, despite its importance to predict the performance of present and future devices based on ultrathin silicon layers.

Keywords

MOSFET; electron mobility; elemental semiconductors; silicon; silicon-on-insulator; double-gate MOSFET; low-field electron mobility model; silicon thicknesses; ultrathin silicon layers; ultrathin-body SOI; Circuit synthesis; Degradation; Effective mass; Electron mobility; Electrostatics; MOSFETs; Particle scattering; Predictive models; Semiconductor films; Silicon on insulator technology; Mobility modeling; silicon thickness dependencies; silicon-on-insulator (SOI) MOSFETs; ultrathin silicon thicknesses;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2007.902899

Filename

4294239