DocumentCode :
1107523
Title :
SPE-CoSi2submicrometer lines by lift-off using selective reaction and its application to a permeable-base transistor
Author :
Ishibashi, Koichiro ; Furukawa, Seijiro ; Ishibashi, Koji ; Furukawa, S.
Author_Institution :
Hitachi Ltd., Tokyo, Japan
Volume :
33
Issue :
3
fYear :
1986
fDate :
3/1/1986 12:00:00 AM
Firstpage :
322
Lastpage :
327
Abstract :
Epitaxial CoSi2submicrometer lines along the
Keywords :
Annealing; Crystallization; Dry etching; Epitaxial growth; Fabrication; Lithography; Plasma temperature; Reproducibility of results; Silicides; Substrates;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1986.22490
Filename :
1485707
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1107523
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