• DocumentCode
    1107523
  • Title

    SPE-CoSi2submicrometer lines by lift-off using selective reaction and its application to a permeable-base transistor

  • Author

    Ishibashi, Koichiro ; Furukawa, Seijiro ; Ishibashi, Koji ; Furukawa, S.

  • Author_Institution
    Hitachi Ltd., Tokyo, Japan
  • Volume
    33
  • Issue
    3
  • fYear
    1986
  • fDate
    3/1/1986 12:00:00 AM
  • Firstpage
    322
  • Lastpage
    327
  • Abstract
    Epitaxial CoSi2submicrometer lines along the
  • Keywords
    Annealing; Crystallization; Dry etching; Epitaxial growth; Fabrication; Lithography; Plasma temperature; Reproducibility of results; Silicides; Substrates;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1986.22490
  • Filename
    1485707
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1107523