DocumentCode
1107573
Title
Picosecond optoelectronic measurement of the high-frequency scattering parameters of a GaAs FET
Author
Cooper, Donald E. ; Moss, Steven C.
Author_Institution
The Aerospace Corp., Los Angeles, CA, USA
Volume
22
Issue
1
fYear
1986
fDate
1/1/1986 12:00:00 AM
Firstpage
94
Lastpage
100
Abstract
To investigate the application of picosecond optoelectronics to device diagnostics, we use these techniques to characterize a high frequency GaAs field effect transistor (FET). The picosecond transient response of the device is transformed to the frequency domain to extract scattering parameters with >60 GHz bandwidth. The large bandwidth available and simple de-embedding procedures make this a very promising technique for characterization of devices operating in the millimeter-wave region.
Keywords
Electrooptic materials/devices; Millimeter-wave FETs; Scattering parameters measurement; Transient analysis; Ultrafast optics; Bandwidth; FETs; Frequency measurement; Gallium arsenide; Optical pulse generation; Pulse generation; Pulse measurements; Sampling methods; Scattering parameters; Time domain analysis;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/JQE.1986.1072878
Filename
1072878
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