Title :
Picosecond optoelectronic measurement of the high-frequency scattering parameters of a GaAs FET
Author :
Cooper, Donald E. ; Moss, Steven C.
Author_Institution :
The Aerospace Corp., Los Angeles, CA, USA
fDate :
1/1/1986 12:00:00 AM
Abstract :
To investigate the application of picosecond optoelectronics to device diagnostics, we use these techniques to characterize a high frequency GaAs field effect transistor (FET). The picosecond transient response of the device is transformed to the frequency domain to extract scattering parameters with >60 GHz bandwidth. The large bandwidth available and simple de-embedding procedures make this a very promising technique for characterization of devices operating in the millimeter-wave region.
Keywords :
Electrooptic materials/devices; Millimeter-wave FETs; Scattering parameters measurement; Transient analysis; Ultrafast optics; Bandwidth; FETs; Frequency measurement; Gallium arsenide; Optical pulse generation; Pulse generation; Pulse measurements; Sampling methods; Scattering parameters; Time domain analysis;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.1986.1072878
