Title :
On the photoresponse of GaAs MESFET´s: Backgating and deep traps effect
Author :
Papaionannou, George J. ; Forrest, John R.
Author_Institution :
University of Athens, Athens, Greece
fDate :
3/1/1986 12:00:00 AM
Abstract :
This work presents certain effects of optical illumination on a GaAs MESFET. The relative roles of the device geometry, hole traps in the channel and backgating are clarified. Experimentally, the optical responsitivity in the range 250 kHz-2.6 GHz is measured. The effects of cw illumination and substrate bias on the device are also examined.
Keywords :
FETs; Frequency; Gallium arsenide; High speed optical techniques; Lighting; MESFETs; Photoconducting devices; Photoconductivity; Semiconductor optical amplifiers; Stimulated emission;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1986.22497
