DocumentCode
1107601
Title
On the photoresponse of GaAs MESFET´s: Backgating and deep traps effect
Author
Papaionannou, George J. ; Forrest, John R.
Author_Institution
University of Athens, Athens, Greece
Volume
33
Issue
3
fYear
1986
fDate
3/1/1986 12:00:00 AM
Firstpage
373
Lastpage
378
Abstract
This work presents certain effects of optical illumination on a GaAs MESFET. The relative roles of the device geometry, hole traps in the channel and backgating are clarified. Experimentally, the optical responsitivity in the range 250 kHz-2.6 GHz is measured. The effects of cw illumination and substrate bias on the device are also examined.
Keywords
FETs; Frequency; Gallium arsenide; High speed optical techniques; Lighting; MESFETs; Photoconducting devices; Photoconductivity; Semiconductor optical amplifiers; Stimulated emission;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1986.22497
Filename
1485714
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