DocumentCode
1107851
Title
Resonant-microbridge vapor sensor
Author
Howe, Roger T. ; Muller, Richard S.
Volume
33
Issue
4
fYear
1986
fDate
4/1/1986 12:00:00 AM
Firstpage
499
Lastpage
506
Abstract
A novel integrated vapor sensor is described that incorporates a polycrystalline silicon microbridge coated with a thin polymer film. The microbridge is resonated electrostatically and its vibration is detected capacitively using an integrated NMOS circuit. Vapor uptake by the polymer increases the mass-loading on the microbridge, thereby perturbing the first resonant frequency of the microbridge. In the prototype device, a 150-nm-thick layer of negative photoresist coats a 153-µm-long 1.35-µm-thick polycrystalline silicon microbridge. The phase between the excitation and output voltages at resonance is monitored as the sensor output signal. Exposure to saturated xylene vapor produces a phase shift of -8° with a response time of less than 7 min.
Keywords
Circuits; MOS devices; Polymer films; Prototypes; Resists; Resonance; Resonant frequency; Sensor phenomena and characterization; Silicon; Thin film sensors;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1986.22519
Filename
1485736
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