Title :
A Taylor-Galerkin finite element method for the hydrodynamic semiconductor equations
Author :
Bova, Steven ; Carey, Graham F.
Author_Institution :
Dept. of Aerosp. Eng. & Eng. Mech., Texas Univ., Austin, TX, USA
fDate :
12/1/1995 12:00:00 AM
Abstract :
A new Taylor-Galerkin finite element method and adaptive, time-iterative scheme are developed for simulating single-carrier submicron-scale semiconductor device transport with the hydrodynamic model under the assumptions of parabolic energy bands. Boundary conditions are applied using characteristic projections. Numerical studies are conducted to investigate the sensitivity of the given model to some of the parameters contained in typical heat flux and relaxation time models for a one-dimensional, representative test problem
Keywords :
Galerkin method; finite element analysis; iterative methods; semiconductor device models; Taylor-Galerkin finite element method; adaptive time-iterative method; boundary conditions; characteristic projections; heat flux; hydrodynamic model; one-dimensional equations; parabolic energy bands; relaxation time; simulation; single-carrier submicron-scale semiconductor device transport; Boundary conditions; Charge carriers; Equations; Finite element methods; Helium; High definition video; Hydrodynamics; Semiconductor devices; Testing; Thermal conductivity;
Journal_Title :
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
