Title :
GaAs0.7Sb0.3/GaAs type-II quantum-well laser with adjacent InAs quantum-dot layer
Author :
Lin, Y.R. ; Lin, H.H. ; Chu, J.H.
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei
Abstract :
A GaAs0.7Sb0.3/GaAs type-II quantum-well laser with a InAs quantum-dot (QD) layer adjacent to the well is reported. The laser shows much lower threshold current density, lower internal loss and higher characteristic temperature than the device without adjacent QDs. The better performances are attributed to additional dimensional confinement, resulting from a spatial potential fluctuation induced by the adjacent QDs, for carriers in the active region of the laser.
Keywords :
III-V semiconductors; current density; gallium arsenide; gallium compounds; indium compounds; laser beams; quantum well lasers; semiconductor quantum dots; GaAs0.7Sb0.3-GaAs; InAs; current density; differential quantum efficiency; self-assembled quantum-dot layer; spatial potential fluctuation; type-II quantum-well laser;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2009.1243
