DocumentCode
1108222
Title
A model for the current—Voltage characteristics of MODFET´s
Author
Park, Kwangmean ; Kwack, Kae Dal
Author_Institution
Hanyang University, Seoul, Korea
Volume
33
Issue
5
fYear
1986
fDate
5/1/1986 12:00:00 AM
Firstpage
673
Lastpage
676
Abstract
A model for the 
characteristics of MODFET\´s is presented. In this paper, an analytic velocity-field model is used. To more accurately describe the physical characteristics of MODFET\´s, the model of this paper is divided into two regions (the linear region and the saturation region), being continuous at the pinchoff voltage, and includes the diffusion component in addition to the drift component of current. Using this model, the simulated characteristics are in excellent agreement with the experimental data.
characteristics of MODFET\´s is presented. In this paper, an analytic velocity-field model is used. To more accurately describe the physical characteristics of MODFET\´s, the model of this paper is divided into two regions (the linear region and the saturation region), being continuous at the pinchoff voltage, and includes the diffusion component in addition to the drift component of current. Using this model, the simulated characteristics are in excellent agreement with the experimental data.Keywords
Computer aided analysis; Electrodes; Electrons; Epitaxial layers; Gallium arsenide; HEMTs; MODFETs; Potential well; Semiconductor devices; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1986.22550
Filename
1485767
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