Gain control operation of a four-terminal p-n-p In0.53Ga0.47As/InP junction field-effect transistor grown by molecular-beam epitaxy

A four-terminal epitaxial p-n-p junction field-effect transistor grown by molecular-beam epitaxy is shown to be an effective one-component gain control element when operated as a four-terminal device. Control of amplifier gain is demonstrated by using the back-gate terminal to adjust the transconductance of a standard three-terminal transistor. The effect of parasitic capacitance on amplifier gain and cutoff frequency is described for a common-source configuration.