DocumentCode :
1108335
Title :
Enhancing current spreading by simple electrode pattern design methodology in lateral GaN/InGaN LEDs
Author :
Yun, J.S. ; Shim, J.I. ; Shin, D.S.
Author_Institution :
Dept. of Electr. & Comput. Sci. Eng., Hanyang Univ., Ansan
Volume :
45
Issue :
13
fYear :
2009
Firstpage :
703
Lastpage :
705
Abstract :
An electrode pattern design methodology that improves the current uniformity in mesa-structured GaN/InGaN blue light-emitting diodes (LEDs) is investigated. Comparisons between an LED with a new electrode pattern adopting the proposed methodology and an LED with a commercially used electrode are made in view of both current and luminance distributions. Simulations as well as experimental results show that the proposed simple design methodology is very effective to spread current more uniformly in the active layer.
Keywords :
III-V semiconductors; electrodes; gallium compounds; indium compounds; light emitting diodes; semiconductor device models; wide band gap semiconductors; GaN-InGaN; blue light-emitting diode; current spreading; electrode pattern design; luminance distribution;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el.2009.0803
Filename :
5117405
Link To Document :
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