SIT Image sensor: Design considerations and characteristics

Author

Yusa, Atsushi ; Nishizawa, Jun-ichi ; Imai, Masaharu ; Yamada, Hidetoshi ; Nakamura, Jun-ichi ; Mizoguchi, Toyokazu ; Ohta, Yoshinori ; Takayama, Michio

Author_Institution

Olympus Optical Company, Ltd., Tatsuno, Nagano, Japan

Volume

33

Issue

6

fYear

1986

fDate

6/1/1986 12:00:00 AM

Firstpage

735

Lastpage

742

Abstract

This paper concerns a new solid-state imaging device using a static induction transistor (SIT). The device has a single SIT/pixel structure previously proposed by Nishizawa et al. The authors developed a new serial readout area array configuration suitable for standard TV format, and its operational characteristics have been analyzed using a simplified model. Image sensors consisting of 170(H) × 124(V) pixels were fabricated using a combined SIT and MOS process, and their measured characteristics agree well with the analysis. Signal current as large as 94 µA was obtained at an exposure value of 0.17 lx . s without any output amplifier, and it is expected that sensitivity will be improved with a decrease in the charge storage capacitance of the SIT gate.

Keywords

Charge coupled devices; Circuits; High speed optical techniques; Image sensors; Optical amplifiers; Optical imaging; Optical sensors; Pixel; Sensor phenomena and characterization; TV;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/T-ED.1986.22562

Filename

1485779