Novel resonant tunneling transistor with high transconductance at room temperature

Author

Peatman, W.C.B. ; Brown, E.R. ; Rooks, M.J. ; Maki, P. ; Grimm, W.J. ; Shur, M.

Author_Institution

Dept. of Electr. Eng., Virginia Univ., Charlottesville, VA, USA

Volume

15

Issue

7

fYear

1994

fDate

7/1/1994 12:00:00 AM

Firstpage

236

Lastpage

238

Abstract

A resonant tunneling transistor (RTT) utilizing a novel heterodimensional Schottky gate technology is described. The gate is formed by electroplating Pt/Au onto the side of an AlGaAs/GaAs double barrier structure. The gate voltage modulates the drain current by modulating the area of the quasi-two dimensional electron accumulation layer which forms above the source barrier under drain-source bias. Room temperature transistor characteristics included a peak current of 225 mA/mm and peak transconductance of 218 mS/mm. The ultrafine fabrication process is also discussed.<>

Keywords

III-V semiconductors; Schottky gate field effect transistors; aluminium compounds; gallium arsenide; resonant tunnelling devices; 218 mS/mm; Pt-Au-AlGaAs-GaAs; RTT; double barrier structure; drain-source bias; electroplating; heterodimensional Schottky gate technology; high transconductance; quasi-two dimensional electron accumulation layer; resonant tunneling transistor; room temperature; ultrafine fabrication process; Electrons; Etching; Gallium arsenide; Gold; Lithography; Resonant tunneling devices; Schottky barriers; Temperature; Transconductance; Voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.294081

Filename

294081