• DocumentCode
    1108416
  • Title

    A low-barrier Schottky process using MoSi2

  • Author

    Kapoor, Ashok K. ; Thomas, Michael E. ; Vora, Madhukar B.

  • Author_Institution
    Fairchild Research Center, Palo Alto, CA
  • Volume
    33
  • Issue
    6
  • fYear
    1986
  • fDate
    6/1/1986 12:00:00 AM
  • Firstpage
    772
  • Lastpage
    778
  • Abstract
    A technology to produce low-barrier MoSi2Schottky diodes for use in LSI bipolar circuits has been developed. Molybdenum disilicide is formed on single-crystal silicon by a self-aligned process under extremely clean conditions. Auger electron spectroscopy (AES) and infrared (IR) absorption techniques are used extensively to monitor the formation and thickness of MoSi2films. Capacitance-voltage and current-voltage measurements at varying temperatures are employed to characterize the Schottky barrier, which has a measured potential of 0.66 eV.
  • Keywords
    Capacitance measurement; Circuits; Current measurement; Electrons; Infrared spectra; Large scale integration; Schottky diodes; Silicon; Spectroscopy; Temperature measurement;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1986.22567
  • Filename
    1485784
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1108416