Title :
High-mobility FET in strained silicon
Author :
Keyes, Robert W.
Author_Institution :
IBM Corporation, Thomas J. Watson Research Center, Yorktown Heights, NY
fDate :
6/1/1986 12:00:00 AM
Abstract :
Suitably strained silicon exhibits a mobility anisotropy that can be used to advantage in field-effect transistors. The desired strain can be achieved through heteroepitaxy.
Keywords :
Anisotropic magnetoresistance; Capacitive sensors; Electron mobility; FETs; Lattices; Piezoresistance; Scattering; Silicon; Substrates; Tensile stress;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1986.22579
