• DocumentCode
    110855
  • Title

    Screening in Ultrashort (5 nm) Channel MoS2 Transistors: A Full-Band Quantum Transport Study

  • Author

    Mishra, Varun ; Smith, Samuel ; Lei Liu ; Zahid, Ferdows ; Yu Zhu ; Hong Guo ; Salahuddin, Sayeef

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Sci., Univ. of California at Berkeley, Berkeley, CA, USA
  • Volume
    62
  • Issue
    8
  • fYear
    2015
  • fDate
    Aug. 2015
  • Firstpage
    2457
  • Lastpage
    2463
  • Abstract
    Full-band ballistic quantum transport calculations were used to study the screening effects in ultrashort-channel few-layer MoS2 transistors. A large density of states resulted in small screening lengths while inhibiting direct source-to-drain tunneling. Short-channel effects were observed even for the structurally confined 2-D transistors resulting in degraded electrostatic control. Electron confinement effects were also observed in the OFF-state in multilayered devices.
  • Keywords
    ballistic transport; molybdenum compounds; semiconductor doping; tunnel transistors; 2D transistors; MoS2; density of states; electron confinement effects; electrostatic control; full-band ballistic quantum transport; multilayered devices; short-channel effects; size 5 nm; source-to-drain tunneling; ultrashort channel transistors; Doping; Electric potential; Electrostatics; Logic gates; Performance evaluation; Photonic band gap; Transistors; Dichalcogenide; MoS₂; MoS2; monolayer transistors; nonequilibrium Green's function (NEGF); nonequilibrium Green???s function (NEGF); quantum confinement; quantum confinement.;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2015.2444353
  • Filename
    7131529
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=110855