Title :
The recovery of electron field-effect mobility on ion-beam-nitridized transistors with sacrificial oxide treatment
Author_Institution :
General Motors Research Laboratories, Warren, MI
fDate :
6/1/1986 12:00:00 AM
Abstract :
The use of a direct ion-beam-nitridized (IBN) mask can reduce the field oxide lateral encroachment from 1.0 to 0.35 µm per device edge. However, mobility degradation has been observed on IBN transistors. We found that with a sacrificial oxide (SO) treatment, the electron field-effect mobility is increased from 573 cm2/V . s to 640 cm2/V . s-a value similar to the local oxidation of silicon (LOCOS) process.
Keywords :
Degradation; Electron mobility; Etching; FETs; Fabrication; Isolation technology; Nitrogen; Optical films; Oxidation; Silicon;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1986.22582
