• DocumentCode
    1108564
  • Title

    The recovery of electron field-effect mobility on ion-beam-nitridized transistors with sacrificial oxide treatment

  • Author

    Lee, Han-Sheng

  • Author_Institution
    General Motors Research Laboratories, Warren, MI
  • Volume
    33
  • Issue
    6
  • fYear
    1986
  • fDate
    6/1/1986 12:00:00 AM
  • Firstpage
    867
  • Lastpage
    868
  • Abstract
    The use of a direct ion-beam-nitridized (IBN) mask can reduce the field oxide lateral encroachment from 1.0 to 0.35 µm per device edge. However, mobility degradation has been observed on IBN transistors. We found that with a sacrificial oxide (SO) treatment, the electron field-effect mobility is increased from 573 cm2/V . s to 640 cm2/V . s-a value similar to the local oxidation of silicon (LOCOS) process.
  • Keywords
    Degradation; Electron mobility; Etching; FETs; Fabrication; Isolation technology; Nitrogen; Optical films; Oxidation; Silicon;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1986.22582
  • Filename
    1485799
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1108564