Reflectivity of TE modes at the facets of buried heterostructure injection lasers

The mode reflectivity of narrow stripe geometry buried-heterostructure GaAs/GaAlAs lasers was computed taking into account lateral confinement, as well as transverse confinement. The reflectivity was found to increase with increasing of the junction width, up to the broad-area value, in contrast to results obtained previously. The differences between the lowest computed reflectivities and the broad-area values were found to be 10-25 percent. Lateral confinement should therefore be considered in cases where single-mode confinement and mode reflectivity are important.