DocumentCode :
1109141
Title :
Monolithic thin-film photoconductor—AC EL structure with extrinsic memory by optical coupling
Author :
Thioulouse, Pascal ; Solomon, Ionel
Author_Institution :
Center National d´´Etudes des Télécommunications, Bagneux, France
Volume :
33
Issue :
8
fYear :
1986
fDate :
8/1/1986 12:00:00 AM
Firstpage :
1149
Lastpage :
1154
Abstract :
A novel memory ZnS:Mn ac thin-film EL device is described. The deposition of a photoconducting thin film of amorphous silicon on a conventional EL layer stack induces a hysteretic 
characteristic. Operating characteristics are discussed. Outstanding features are a typical memory margin of 9V peak and electrical switching times (ON and OFF) shorter than 2 ms under 1-kHz CW excitation.
characteristic. Operating characteristics are discussed. Outstanding features are a typical memory margin of 9V peak and electrical switching times (ON and OFF) shorter than 2 ms under 1-kHz CW excitation.Keywords :
Fabrication; Hysteresis; Optical coupling; Optical films; Photoconductivity; Semiconductor thin films; Sputtering; Thin film devices; Voltage; Zinc compounds;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1986.22633
Filename :
1485850
Link To Document :
