A 71–80 GHz Amplifier Using 0.13- μm CMOS Technology

Author

Wang, To-Po ; Wang, Huei

Author_Institution

Nat. Taiwan Univ., Taipei

Volume

17

Issue

9

fYear

2007

Firstpage

685

Lastpage

687

Abstract

A 71-80 GHz amplifier using 0.13-mum standard mixed signal/radio frequency complementary metal-oxide-semiconductor (CMOS) technology is presented in this letter. This four-stage cascade thin-film microstrip amplifier achieves the peak gain of 7.0 dB at 75 GHz. The 3-dB frequency bandwidth range is from 71 to 80 GHz. The amplifier demonstrates the highest amplification frequency and smallest chip size among previous published millimeter-wave (MMW) 0.13-mum CMOS amplifiers.

Keywords

CMOS analogue integrated circuits; cascade networks; field effect MIMIC; millimetre wave amplifiers; 3-dB frequency bandwidth; CMOS technology; cascade thin-film microstrip amplifier; complementary metal-oxide-semiconductor technology; frequency 71 GHz to 80 GHz; millimeter-wave amplifier; mixed signal-radio frequency; size 0.13 micron; Bandwidth; CMOS process; CMOS technology; Circuits; Frequency; Gain; Microstrip; Millimeter wave technology; Radiofrequency amplifiers; Transistors; Complementary metal-oxide-semiconductor (CMOS); co-planar waveguides (CPW); low-noise amplifier (LNA); millimeter-wave (MMW); thin-film microstrip (TFMS);

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2007.903463

Filename

4295134