DocumentCode :
1109370
Title :
Comparison of Auger recombination in GaInAs-AlInAs multiple quantum well structure and in bulk GaInAs
Author :
Sermage, B. ; Chemla, D.S. ; Sivco, D. ; Cho, A.Y.
Author_Institution :
CNET, Bagneux, France
Volume :
22
Issue :
6
fYear :
1986
fDate :
6/1/1986 12:00:00 AM
Firstpage :
774
Lastpage :
780
Abstract :
Carrier lifetime has been measured in GaInAs-AlInAs multiple quantum well structures and in thick GaInAs samples for local carrier densities between 
and 
cm-3. Carrier lifetime and Auger recombination are found to be very close (±20 percent) in the two structures. The Auger limited T0 values calculated for DH and MQW lasers are found to be, respectively, 93 and 170 K. Optimization of the quantum well laser as a function of the number of wells in the active region is discussed.
and cm-3. Carrier lifetime and Auger recombination are found to be very close (±20 percent) in the two structures. The Auger limited TKeywords :
Optical fiber transmitters, lasers; Quantum-well laser; Charge carrier density; Charge carrier lifetime; Density measurement; Fiber lasers; Indium gallium arsenide; Laser beams; Laser modes; Quantum well lasers; Radiative recombination; Temperature;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.1986.1073035
Filename :
1073035
Link To Document :
