A monolithically integrated 120-GHz InGaAs/InAlAs/InP HEMT amplifier

Author

Lai, R. ; Wang, H. ; Tan, K.L. ; Streit, D.C. ; Liu, P.H. ; Velebir, J., Jr. ; Chen, S. ; Berenz, J. ; Pospieszalski, M.W.

Author_Institution

TRW Adv. Microelectron. Lab., Redondo Beach, CA, USA

Volume

4

Issue

6

fYear

1994

fDate

6/1/1994 12:00:00 AM

Firstpage

194

Lastpage

195

Abstract

We report the design and gain performance for a two-stage 120-GHz monolithically integrated amplifier using 0.1-μm gate length pseudomorphic In/sub 0.60/Ga/sub 0.40/As/In/sub 0.52/Al/sub 0.48/As/InP HEMT´s. The two-stage amplifier demonstrated 10-12 dB gain measured between 119.5 to 123.5 GHz. To the best of our knowledge, this is the first demonstration of a monolithically integrated InP HEMT amplifier reported at D-band.

Keywords

III-V semiconductors; MMIC; aluminium compounds; field effect integrated circuits; gallium arsenide; high electron mobility transistors; indium compounds; microwave amplifiers; 0.1 micron; 10 to 12 dB; 119.5 to 123.5 GHz; 120 GHz; D-band; EHF; HEMT amplifier; In/sub 0.60/Ga/sub 0.40/As-In/sub 0.52/Al/sub 0.48/As-InP; MIMIC; MM-wave ICs; gain performance; monolithically integrated amplifier; pseudomorphic HEMT; two-stage amplifier; Cutoff frequency; Extraterrestrial measurements; Gain measurement; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; Length measurement; Performance gain; Radiofrequency amplifiers;

fLanguage

English

Journal_Title

Microwave and Guided Wave Letters, IEEE

Publisher

ieee

ISSN

1051-8207

Type

jour

DOI

10.1109/75.294290

Filename

294290