• DocumentCode
    1109490
  • Title

    Avalanche buildup time of InP/InGaAsP/InGaAs avalanche photodiodes with separate absorption, grading, and multiplication regions

  • Author

    Jhee, Y.K. ; Campbell, J.C. ; Ferguson, J.F. ; Dentai, A.G. ; Holden, W.S.

  • Author_Institution
    AT&T Bell Labs., Holmdel, NJ, USA
  • Volume
    22
  • Issue
    6
  • fYear
    1986
  • fDate
    6/1/1986 12:00:00 AM
  • Firstpage
    753
  • Lastpage
    755
  • Abstract
    The avalanche buildup time of an avalanche photodiode can be determined from the frequency response of the noise power as a function of the dc multiplication M0. In this paper we report on the first measurements of the avalanche buildup time of InP/InGaAsP/ InGaAs avalanche photodiodes with separate absorption, grading, and multiplication regions (SAGM-APD\´s). Measurements on several different device structures reveal that the avalanche buildup time (gain-bandwidth product) decreases (increases) with increasing carrier concentration in the multiplication region. The shortest buildup time that we have observed was M_{0} \\times 4.2 ps which corresponds to a gain-bandwidth Product of 38 GHz.
  • Keywords
    Optical fiber receivers; Absorption; Avalanche photodiodes; Circuit noise; Frequency measurement; Frequency response; Indium gallium arsenide; Indium phosphide; Noise measurement; Power measurement; Time measurement;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/JQE.1986.1073045
  • Filename
    1073045
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1109490