DocumentCode :
1109490
Title :
Avalanche buildup time of InP/InGaAsP/InGaAs avalanche photodiodes with separate absorption, grading, and multiplication regions
Author :
Jhee, Y.K. ; Campbell, J.C. ; Ferguson, J.F. ; Dentai, A.G. ; Holden, W.S.
Author_Institution :
AT&T Bell Labs., Holmdel, NJ, USA
Volume :
22
Issue :
6
fYear :
1986
fDate :
6/1/1986 12:00:00 AM
Firstpage :
753
Lastpage :
755
Abstract :
The avalanche buildup time of an avalanche photodiode can be determined from the frequency response of the noise power as a function of the dc multiplication M0 . In this paper we report on the first measurements of the avalanche buildup time of InP/InGaAsP/ InGaAs avalanche photodiodes with separate absorption, grading, and multiplication regions (SAGM-APD\´s). Measurements on several different device structures reveal that the avalanche buildup time (gain-bandwidth product) decreases (increases) with increasing carrier concentration in the multiplication region. The shortest buildup time that we have observed was 
ps which corresponds to a gain-bandwidth Product of 38 GHz.
ps which corresponds to a gain-bandwidth Product of 38 GHz.Keywords :
Optical fiber receivers; Absorption; Avalanche photodiodes; Circuit noise; Frequency measurement; Frequency response; Indium gallium arsenide; Indium phosphide; Noise measurement; Power measurement; Time measurement;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.1986.1073045
Filename :
1073045
Link To Document :
