DocumentCode :
1109535
Title :
Location of 1/f noise sources in BJT´s and HBJT´s—I. theory
Author :
Van Der Ziel, Aldert ; Zhang, Xiaonan ; Pawlikiewicz, Adam H.
Author_Institution :
University of Minnesota, Minneapolis, MN
Volume :
33
Issue :
9
fYear :
1986
fDate :
9/1/1986 12:00:00 AM
Firstpage :
1371
Lastpage :
1376
Abstract :
The most general case of 
noise in transistors can be described by three independent noise current generators: ibe between base and emitter, ibc between base and collector, and iec between emitter and collector. By short-circuiting the base and the collector to ground and comparing the base and collector noise spectra 
and 
for the case of zero feedback from the emitter with the base and collector noise spectra 
and 
for the case of strong feedback from the emitter, one can evaluate the relative strength of the three noise sources. By measuring the current dependence of , , , and , one can assign physical processes to the current generators ibc , ibe , and iec . It is the aim of this paper to demonstrate theoretically a simple method for locating noise sources in BJT\´s and HBJT\´s by comparing the base and collector noise for the cases without and with strong emitter feedback. In later papers we shall demonstrate experimentally how this method is applied to practical situations.
noise in transistors can be described by three independent noise current generators: i and for the case of zero feedback from the emitter with the base and collector noise spectra and for the case of strong feedback from the emitter, one can evaluate the relative strength of the three noise sources. By measuring the current dependence of , , , and , one can assign physical processes to the current generators i noise sources in BJT\´s and HBJT\´s by comparing the base and collector noise for the cases without and with strong emitter feedback. In later papers we shall demonstrate experimentally how this method is applied to practical situations.Keywords :
Bipolar integrated circuits; Bipolar transistors; Doping; Equivalent circuits; Heterojunction bipolar transistors; Ice; Integrated circuit noise; Noise generators; Spontaneous emission; Transconductance;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1986.22672
Filename :
1485889
Link To Document :
