DocumentCode
1109616
Title
Superior low-noise GaAs MESFET´s with graded channel grown by MBE
Author
Nair, V.K. ; Tam, G. ; Curless, J.A. ; Kramer, G.D. ; Peffley, M.S. ; Tsui, R.K. ; Atkins, W.K.
Author_Institution
Motorola Semiconductor Products Sector, Semiconductor Research and Development Laboratories, Phoenix, AZ
Volume
33
Issue
9
fYear
1986
fDate
9/1/1986 12:00:00 AM
Firstpage
1393
Lastpage
1395
Abstract
GaAs MESFET´s with superior microwave performance were fabricated with uniform and nonuniform doping profiles grown by molecular-beam epitaxy (MBE). At 8 GHz the devices with graded doping exhibited about 1 dB higher gain at the minimum noise figure point compared to flat doping profile devices. The noise figure of 1.38 dB with an associated gain of 8.6 dB at 8 GHz was obtained for the best device with a graded profile.
Keywords
Atomic layer deposition; Conducting materials; Doping profiles; Gain; Gallium arsenide; MESFETs; Microwave devices; Molecular beam epitaxial growth; Noise figure; Transconductance;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1986.22679
Filename
1485896
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