DocumentCode :
1109642
Title :
1.3 μm double quantum well GaInNAs distributed feedback laser diode with 13.8 GHz small signal modulation bandwidth
Author :
Gollub, D. ; Moses, S. ; Forchel, A.
Author_Institution :
Technische Phys., Univ. Wurzburg, Germany
Volume :
40
Issue :
19
fYear :
2004
Firstpage :
1181
Lastpage :
1182
Abstract :
A report is presented on continuous-wave (CW) singlemode operation of a distributed feedback GaInAsN laser diode at 1295 nm. A sidemode supression ratio of 43 dB is obtained at 60 mA drive current. Small signal modulation bandwidth measurements show a record 3 dB cutoff frequency of 13.8 GHz.
Keywords :
III-V semiconductors; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; optical modulation; quantum well lasers; semiconductor quantum wells; wide band gap semiconductors; 1.3 micron; 1295 nm; 13.8 GHz; 3 dB; 43 dB; 60 mA; CW singlemode operation; GaInNAs; continuous-wave singlemode operation; double quantum well GaInNAs distributed feedback laser diode; side-mode suppression ratio; signal modulation bandwidth;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:20046042
Filename :
1336637
Link To Document :
بازگشت