• DocumentCode
    1109642
  • Title

    1.3 μm double quantum well GaInNAs distributed feedback laser diode with 13.8 GHz small signal modulation bandwidth

  • Author

    Gollub, D. ; Moses, S. ; Forchel, A.

  • Author_Institution
    Technische Phys., Univ. Wurzburg, Germany
  • Volume
    40
  • Issue
    19
  • fYear
    2004
  • Firstpage
    1181
  • Lastpage
    1182
  • Abstract
    A report is presented on continuous-wave (CW) singlemode operation of a distributed feedback GaInAsN laser diode at 1295 nm. A sidemode supression ratio of 43 dB is obtained at 60 mA drive current. Small signal modulation bandwidth measurements show a record 3 dB cutoff frequency of 13.8 GHz.
  • Keywords
    III-V semiconductors; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; optical modulation; quantum well lasers; semiconductor quantum wells; wide band gap semiconductors; 1.3 micron; 1295 nm; 13.8 GHz; 3 dB; 43 dB; 60 mA; CW singlemode operation; GaInNAs; continuous-wave singlemode operation; double quantum well GaInNAs distributed feedback laser diode; side-mode suppression ratio; signal modulation bandwidth;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20046042
  • Filename
    1336637