Title :
Scaling properties of high electron mobility transistors
Author :
Kizilyalli, Isik C. ; Hess, Karl ; Larson, John L. ; Widiger, David J.
Author_Institution :
University of Illinois, Urbana, IL
fDate :
10/1/1986 12:00:00 AM
Abstract :
We present the scaling properties of an idealized HEMT structure at 300 K. A two-dimensional device model based on three moments of the Boltzmann equation is used to investigate a constant voltage scaling scheme. Detailed results are presented for gate lengths of 2.0, 1.33, 1.0, 0.67, and 0.50 µm.
Keywords :
Boltzmann equation; Capacitance; Doping; FETs; Gallium arsenide; HEMTs; MESFETs; MODFETs; MOSFET circuits; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1986.22690
