• DocumentCode
    1109728
  • Title

    Scaling properties of high electron mobility transistors

  • Author

    Kizilyalli, Isik C. ; Hess, Karl ; Larson, John L. ; Widiger, David J.

  • Author_Institution
    University of Illinois, Urbana, IL
  • Volume
    33
  • Issue
    10
  • fYear
    1986
  • fDate
    10/1/1986 12:00:00 AM
  • Firstpage
    1427
  • Lastpage
    1433
  • Abstract
    We present the scaling properties of an idealized HEMT structure at 300 K. A two-dimensional device model based on three moments of the Boltzmann equation is used to investigate a constant voltage scaling scheme. Detailed results are presented for gate lengths of 2.0, 1.33, 1.0, 0.67, and 0.50 µm.
  • Keywords
    Boltzmann equation; Capacitance; Doping; FETs; Gallium arsenide; HEMTs; MESFETs; MODFETs; MOSFET circuits; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1986.22690
  • Filename
    1485907
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1109728