DocumentCode
1109743
Title
The DC, AC, and noise properties of the GaAs/AlGaAs modulation-doped field-effect transistor channel
Author
Whiteside, Christopher F. ; Bosman, Gijs ; Morkoç, Hadis ; Kopp, William F.
Author_Institution
University of Florida, Gainesville, FL
Volume
33
Issue
10
fYear
1986
fDate
10/1/1986 12:00:00 AM
Firstpage
1439
Lastpage
1446
Abstract
The channel noise of a normally-on MODFET has been measured at 
K as a function of bias and frequency. The results are in good agreement with theoretical predictions for velocity fluctuation noise. A new method is introduced to calculate the correct dependence of the two-dimensional carrier concentration on channel voltage. The measurements indicate that real-space-charge transfer in the bias range considered is negligible.
K as a function of bias and frequency. The results are in good agreement with theoretical predictions for velocity fluctuation noise. A new method is introduced to calculate the correct dependence of the two-dimensional carrier concentration on channel voltage. The measurements indicate that real-space-charge transfer in the bias range considered is negligible.Keywords
Epitaxial layers; FETs; Frequency measurement; Gallium arsenide; HEMTs; Impedance; MODFETs; Noise figure; Noise measurement; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1986.22692
Filename
1485909
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