DocumentCode :
1109743
Title :
The DC, AC, and noise properties of the GaAs/AlGaAs modulation-doped field-effect transistor channel
Author :
Whiteside, Christopher F. ; Bosman, Gijs ; Morkoç, Hadis ; Kopp, William F.
Author_Institution :
University of Florida, Gainesville, FL
Volume :
33
Issue :
10
fYear :
1986
fDate :
10/1/1986 12:00:00 AM
Firstpage :
1439
Lastpage :
1446
Abstract :
The channel noise of a normally-on MODFET has been measured at 
K as a function of bias and frequency. The results are in good agreement with theoretical predictions for velocity fluctuation noise. A new method is introduced to calculate the correct dependence of the two-dimensional carrier concentration on channel voltage. The measurements indicate that real-space-charge transfer in the bias range considered is negligible.
K as a function of bias and frequency. The results are in good agreement with theoretical predictions for velocity fluctuation noise. A new method is introduced to calculate the correct dependence of the two-dimensional carrier concentration on channel voltage. The measurements indicate that real-space-charge transfer in the bias range considered is negligible.Keywords :
Epitaxial layers; FETs; Frequency measurement; Gallium arsenide; HEMTs; Impedance; MODFETs; Noise figure; Noise measurement; Voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1986.22692
Filename :
1485909
Link To Document :
