• DocumentCode
    1109973
  • Title

    Measurement of the minority-carrier diffusion length in thin semiconductor films

  • Author

    Chiang, Ching-Lang ; Schwarz, Reinhard ; Slobodin, David E. ; Kolodzey, James ; Wagner, Sigurd

  • Author_Institution
    Intel Corp., Santa Clara, CA
  • Volume
    33
  • Issue
    10
  • fYear
    1986
  • fDate
    10/1/1986 12:00:00 AM
  • Firstpage
    1587
  • Lastpage
    1592
  • Abstract
    The general surface photovoltage theory is derived for thin semiconductor films with barriers on both the front and back surfaces. The calculated surface photovoltage spectrum and its bias-light dependence are compared to measurements made in hydrogenated amorphous silicon samples. Necessary precautions for the determination of the minority-carrier diffusion length are discussed.
  • Keywords
    Amorphous materials; Helium; Length measurement; Optical films; Optical surface waves; Semiconductor films; Silicon; Steady-state; Surface waves; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1986.22711
  • Filename
    1485928