DocumentCode
1109973
Title
Measurement of the minority-carrier diffusion length in thin semiconductor films
Author
Chiang, Ching-Lang ; Schwarz, Reinhard ; Slobodin, David E. ; Kolodzey, James ; Wagner, Sigurd
Author_Institution
Intel Corp., Santa Clara, CA
Volume
33
Issue
10
fYear
1986
fDate
10/1/1986 12:00:00 AM
Firstpage
1587
Lastpage
1592
Abstract
The general surface photovoltage theory is derived for thin semiconductor films with barriers on both the front and back surfaces. The calculated surface photovoltage spectrum and its bias-light dependence are compared to measurements made in hydrogenated amorphous silicon samples. Necessary precautions for the determination of the minority-carrier diffusion length are discussed.
Keywords
Amorphous materials; Helium; Length measurement; Optical films; Optical surface waves; Semiconductor films; Silicon; Steady-state; Surface waves; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1986.22711
Filename
1485928
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