DocumentCode :
1109980
Title :
A 52-GHz 8.5-dB Traveling-Wave Amplifier in 0.13- 
m Standard CMOS Process
Author :
Egels, Matthieu ; Gaubert, Jean ; Pannier, Philippe ; Bourdel, Sylvain
Author_Institution :
Inst. Mater. Microelectron. Nanosci. de Provence, Marseille
Volume :
56
Issue :
5
fYear :
2008
fDate :
5/1/2008 12:00:00 AM
Firstpage :
1226
Lastpage :
1233
Abstract :
The design of a traveling-wave amplifier (TWA) in 0.13-mum standard CMOS technology is presented. It is designed to maximize the gain-bandwidth product (GBP). An asymmetric cascode, coplanar waveguide (CPW), and loss compensation technique enables maximization of the TWA GBP. Design and modeling of 90-Omega CPW used to synthesize inductors of the TWA lines is presented. Simulations with a design kit and developed models for CPW show a 52-GHz bandwidth with a maximum power gain of 8.5 dB at 10 GHz for a 135-mW power consumption. Measurements up to 40 GHz confirm these results.
Keywords :
CMOS integrated circuits; coplanar waveguides; travelling wave amplifiers; CMOS process; asymmetric cascode; coplanar waveguide; frequency 10 GHz; frequency 52 GHz; gain 8.5 dB; gain-bandwidth product; loss compensation technique; power 135 mW; resistance 90 ohm; size 0.13 mum; traveling-wave amplifier; CMOS; RF integrated circuit broadband CMOS circuits; coplanar waveguide (CPW); high gain-bandwidth product (GBP); loss compensation circuits; monolithic microwave integrated circuit (MMIC); traveling-wave amplifier (TWA);
fLanguage :
English
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9480
Type :
jour
DOI :
10.1109/TMTT.2008.920169
Filename :
4475820
Link To Document :
