DocumentCode
1109994
Title
Room temperature Hall mobilities above 1900 cm2/V s in MBE-grown AlGaN/GaN HEMT structures
Author
Storm, D.F. ; Katzer, D.S. ; Binari, S.C. ; Shanabrook, B.V. ; Xu, X. ; McVey, D.S. ; Vaudo, R.P. ; Brandes, G.R.
Author_Institution
Electron. Sci. & Technol. Div., US Naval Res. Lab., Washington, DC, USA
Volume
40
Issue
19
fYear
2004
Firstpage
1226
Lastpage
1227
Abstract
An AlGaN/GaN high electron mobility transistor (HEMT) structure has been grown by plasma-assisted molecular beam epitaxy (MBE) on a free-standing hydride vapour phase epitaxy-grown GaN substrate with a threading dislocation density of ∼8×106 cm-2. A room temperature Hall mobility of 1920 cm2/V s with a sheet carrier density of 0.91×1013 cm-2 was measured. This is the highest room temperature electron mobility reported for an MBE-grown AlGaN/GaN structure. HEMTs fabricated on this material displayed excellent pinch-off, low gate leakage currents, and an off-state breakdown of 90 V.
Keywords
Hall mobility; III-V semiconductors; aluminium compounds; dislocation density; electron mobility; gallium compounds; high electron mobility transistors; leakage currents; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; wide band gap semiconductors; 293 to 298 K; 90 V; AlGaN-GaN; Hall mobilities; MBE-grown AlGaN/GaN HEMT structures; dislocation density; electron mobility; free-standing hydride vapour phase epitaxy-grown GaN substrate; gate leakage currents; high electron mobility transistor; off-state breakdown; plasma-assisted molecular beam epitaxy; room temperature; sheet carrier density;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20045859
Filename
1336687
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