DocumentCode
1110003
Title
Self-aligned AlGaN/GaN high electron mobility transistors
Author
Lee, J. ; Liu, D. ; Kim, H. ; Schuette, M. ; Flynn, J.S. ; Brandes, G.R. ; Lu, W.
Author_Institution
Dept. of Electr. & Comput. Eng., Ohio State Univ., Columbus, OH, USA
Volume
40
Issue
19
fYear
2004
Firstpage
1227
Lastpage
1228
Abstract
Self-aligned T-gate AlGaN/GaN high electron mobility transistors (HEMTs) were fabricated on a sapphire substrate using a thin Ti/Al/Ti/Au ohmic layer. To suppress the gate leakage current, the ohmic contact annealing was performed in a furnace. The self-aligned HEMTs with 0.25 μm gate length and 100 μm width exhibit good pinch-off characteristics, a transconductance of 146 mS/mm, an extrinsic unity current gain cutoff frequency of 38 GHz and a maximum oscillation frequency of 130 GHz.
Keywords
III-V semiconductors; MOCVD; S-parameters; aluminium compounds; annealing; gallium compounds; high electron mobility transistors; leakage currents; scanning electron microscopy; semiconductor epitaxial layers; semiconductor growth; wide band gap semiconductors; 0.25 micron; 100 micron; 130 GHz; 38 GHz; Al2O3; AlGaN-GaN; gate leakage current; high electron mobility transistors; ohmic contact annealing; pinchoff characteristics; sapphire substrate; self-aligned HEMTs; transconductance;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20045939
Filename
1336688
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