Title :
Stability of AlGaN/GaN high-power HEMTs under DC and RF stresses
Author :
Zhang, A.P. ; Kaminsky, E.B. ; Allen, A.F. ; Hedrick, J.W. ; Vertiatchikh, A. ; Eastman, L.F.
Author_Institution :
Gen. Electr. Global Res. Center, Niskayuna, NY, USA
Abstract :
The stability of high-power AlGaN/GaN HEMTs under DC and RF stresses was evaluated. For 50 hours of DC stresses, 100 μm devices exhibited ∼3% full-channel drain current degradation within the first few minutes and another ∼1% current loss during the rest of the stress period. In response to the RF stresses under pulsed conditions at 2.8 GHz, the output power of 1.5 mm devices degraded by ∼13% after 108 hours of stress. Current DLTS measurements revealed the creation of a 0.4 eV trap from the stressed and aged devices.
Keywords :
III-V semiconductors; aluminium compounds; deep level transient spectroscopy; gallium compounds; power HEMT; semiconductor device testing; wide band gap semiconductors; 1.5 mm; 100 micron; 2.8 GHz; AlGaN-GaN; DC stresses; DLTS measurements; RF stresses; current loss; drain current degradation; high power HEMT;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20045932
