Title :
Significance of the channel—Charge partition in the transient MOSFET model
Author :
Fossum, J.G. ; Jeong, H. ; Veeraraghavan, S.
Author_Institution :
University of Florida, Gainesville, FL
fDate :
10/1/1986 12:00:00 AM
Abstract :
Physical insight regarding charge-based transient MOSFET modeling is developed to reveal the significance of the channel-charge partition. Components (charging, displacement, transport, and convection) of transient channel current are discussed in terms of charge (actual and model), and clarification concerning "nonreciprocal capacitance" and origins of error in quasi-static models is given.
Keywords :
Admittance; Capacitance; Circuit simulation; Computer errors; Computer simulation; FETs; MOSFET circuits; SPICE; Uncertainty; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1986.22716
